Electron spin resonance study of nitrogen-doped microcrystalline silicon and amorphous siliconEHARA, T.Applied surface science. 1997, Vol 113114, pp 126-129, issn 0169-4332Conference Paper

ICSFS-8: International Conference on Solid Films and SurfacesHAMAKAWA, Yoshihiro; KOMA, Atsushi.Applied surface science. 1997, Vol 113114, issn 0169-4332, 837 p.Conference Proceedings

Fabrication and characterization of epitaxial films of ionic materialsSAIKI, K.Applied surface science. 1997, Vol 113114, pp 9-17, issn 0169-4332Conference Paper

Atomic and electronic structure of CsBr film grown on LiFand KBr(001)KIGUCHI, Manabu; ENTANI, Shiro; SAIKI, Koichiro et al.Surface science. 2003, Vol 523, Num 1-2, pp 73-79, issn 0039-6028, 7 p.Article

Characterization of surface nanostructures by STM light emission spectroscopyUSHIODA, S.Applied surface science. 1997, Vol 113114, pp 335-342, issn 0169-4332Conference Paper

Structural study of buried interface using soft X-ray emission spectroscopyIWAMI, M.Applied surface science. 1997, Vol 113114, pp 377-383, issn 0169-4332Conference Paper

Investigation of the interaction between a C₆₀ epitaxial film and a Si(111)-7 x 7 surface by electron energy loss spectroscopyIIZUMI, Ken-Ichi; SAIKI, Koichiro; KOMA, Atsushi et al.Surface science. 2002, Vol 518, Num 1-2, pp 126-132, issn 0039-6028, 7 p.Article

Present and future aspects of blue light emitting devicesNAKAMURA, S.Applied surface science. 1997, Vol 113114, pp 689-697, issn 0169-4332Conference Paper

Dynamic and static disorder of alkali halide solid solutions studied by temperature-dependent extended X-ray-absorption fine structureKIGUCHI, Manabu; SAIKI, Koichiro; KOMA, Atsushi et al.Journal of the Physical Society of Japan. 2002, Vol 71, Num 4, pp 1076-1082, issn 0031-9015Article

Investigation of the growth mechanism of an InSe epitaxial layer on a MoS₂ substrateHAYASHI, Toshiyuki; UENO, Keiji; SAIKI, Koichiro et al.Journal of crystal growth. 2000, Vol 219, Num 1-2, pp 115-122, issn 0022-0248Article

Optics of Langmuir-Blodgett films : Are two-dimensional systems unique ?MIYANO, K.Applied surface science. 1997, Vol 113114, pp 299-303, issn 0169-4332Conference Paper

Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage currentARAKAWA, T; MATSUMOTO, R.Applied surface science. 1997, Vol 113114, pp 605-609, issn 0169-4332Conference Paper

Visible light photoemission and negative electron affinity of single-crystalline CsCl thin filmsYOSHIKAWA, Genki; KIGUCHI, Manabu; UENO, Keiji et al.Surface science. 2003, Vol 544, Num 2-3, pp 220-226, issn 0039-6028, 7 p.Article

Determination of nitrogen-radical flux by nitridation of AlWATANABE, S; NOZOYE, H.Applied surface science. 1997, Vol 113114, pp 618-621, issn 0169-4332Conference Paper

Driving forces of the surface reconstructions : Mo and W(001) surfacesCHUNG, J. W.Applied surface science. 1997, Vol 113114, pp 436-439, issn 0169-4332Conference Paper

Influence of film qualities on noise characteristics of a-Si_1-xC_x:H thin films deposited by PECVDICHIHARA, T; AIZAWA, K.Applied surface science. 1997, Vol 113114, pp 759-763, issn 0169-4332Conference Paper

Photoreflectance study on carrier collisions in near-surface region of n-type GaAs grown by MOCVDSAKAI, M; SHINOHARA, M.Applied surface science. 1997, Vol 113114, pp 523-527, issn 0169-4332Conference Paper

Preparation and optical properties of Zn_xCd_1-xS filmsSHIMAOKA, G; SUZUKI, Y.Applied surface science. 1997, Vol 113114, pp 528-533, issn 0169-4332Conference Paper

Mechanisms and applications of selective area growth by metalorganic molecular beam epitaxy (CBE)HEINECKE, H; WACHTER, M.Applied surface science. 1997, Vol 113114, pp 1-8, issn 0169-4332Conference Paper

Numerical simulation of hydrogen redistribution in thin SiO2 films under electron injection in high fieldsGADIYAK, G. V.Applied surface science. 1997, Vol 113114, pp 627-630, issn 0169-4332Conference Paper

Electroluminescence from new silicon systemsHANEMAN, D; YUAN, J.Applied surface science. 1997, Vol 113114, pp 103-110, issn 0169-4332Conference Paper

Atomic-level engineering of cuprates and manganitesBOZOVIC, I; ECKSTEIN, J. N.Applied surface science. 1997, Vol 113114, pp 189-197, issn 0169-4332Conference Paper

Effects of H-termination on initial oxidation processYASUDA, Y; IKEDA, H; ZAIMA, S et al.Applied surface science. 1997, Vol 113114, pp 579-584, issn 0169-4332Conference Paper

Electrical characteristics of a triode with an n-Si/Mo-Au double thin film/n-Si (n-Si/Mo-Au/n-Si) structureGEKKA, Y; SATOH, K; NAGAMI, K et al.Applied surface science. 1997, Vol 113114, pp 718-721, issn 0169-4332Conference Paper

Epitaxial growth of SiGe thin films by ion-beam sputteringSASAKI, K; NAKATA, K; HATA, T et al.Applied surface science. 1997, Vol 113114, pp 43-47, issn 0169-4332Conference Paper